isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=3.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power su

文件：65.269 Kbytes 页数：2 Pages

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DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

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文件：3.58963 Mbytes 页数：7 Pages

IRF