| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：IRF7105；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件：452.89 Kbytes 页数：9 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
丝印：IRF7105；Package：SOP-8；Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件：452.89 Kbytes 页数：9 Pages | EVVOSEMI 翊欧 | EVVOSEMI | ||
IRF7105 | EVALUATION KIT INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The 文件：339.7 Kbytes 页数：18 Pages | Microsemi 美高森美 | Microsemi | |
IRF7105 | HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：271.1 Kbytes 页数：10 Pages | IRF | IRF | |
IRF7105 | Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件：452.89 Kbytes 页数：9 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：302.21 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：307.9 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET DESCRIPTION These HEXFET®Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetiti 文件：319.49 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：307.9 Kbytes 页数：10 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：307.9 Kbytes 页数：10 Pages | IRF | IRF |
详细参数
- 型号：
IRF7105
- 功能描述：
MOSFET MOSFT DUAL N/PCh 25V 3.5A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
SOP8 |
9080 |
只做原装,质量保证 |
询价 | ||
IR |
24+ |
SOP-8 |
200 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
24+ |
SOP8 |
8000 |
只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2013+ |
SOP8 |
16800 |
授权分销IR系列，公司现货库存供应 IRF7105TR，正品原装，品质保证。 |
询价 | ||
IOR |
23+ |
SO-8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
IR |
23+ |
SO-8 |
19526 |
询价 | |||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IOR |
24+ |
SOP8 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
IR |
23+ |
34-PCM |
5000 |
原装正品,假一罚十 |
询价 |
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