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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF640NL	文件：155.4 Kbytes Page：11 Pages	Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：155.4 Kbytes 页数：11 Pages	IRF	IRF
IRF640NLPBF	文件：300.8 Kbytes Page：12 Pages	HEXFET짰 Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 页数：12 Pages	IRF	IRF
IRF640NLPBF	文件：8.24278 Mbytes Page：11 Pages	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF640NPBF	文件：8.24278 Mbytes Page：11 Pages	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF640NPBF	文件：300.8 Kbytes Page：12 Pages	HEXFET짰 Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 页数：12 Pages	IRF	IRF
IRF640NS	文件：155.4 Kbytes Page：11 Pages	Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A) Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：155.4 Kbytes 页数：11 Pages	IRF	IRF
IRF640NS	文件：160.31 Kbytes Page：11 Pages	N-Channel Power MOSFETs 200V, 18A, 0.15ohm Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve 文件：160.31 Kbytes 页数：11 Pages	Fairchild 仙童半导体	Fairchild
IRF640NS	文件：1.19709 Mbytes Page：11 Pages	Advanced Process Technology Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac 文件：1.19709 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF640NSPBF	文件：8.24278 Mbytes Page：11 Pages	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF640NSPBF	文件：300.8 Kbytes Page：12 Pages	HEXFET짰 Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 页数：12 Pages	IRF	IRF

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技术参数

Package：
TO-220AB
Ch：
N
VDS (V)：
200
VGS (V)：
20
RDS(on)@10V (Ω)：
0.18
Qg @10V (nC)：
70
Qgs (nC)：
13
Qgd (nC)：
39
ID Max. (A)：
18
PD Max. (W)：
125
VGS(th) Min. (V)：
2

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鸿昌盛电子科技有限公司	IRF640		25+		200	公司现货库存	询价
深圳市亚泰盈科电子有限公司	IRF640	FAIRCHILD		TO-262	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
千层芯半导体(深圳)有限公司	IRF640	IR	24+		3600	TO-220	询价
深圳市斌能达电子科技有限公司	IRF640	IR	24+	TO-220	2000	全新原装深圳仓库现货有单必成	询价
深圳市正纳电子有限公司	IRF640	IR	23+	TO-220	32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市毅创弘电子科技有限公司	IRF640	IR	24+	PTO-220	1500	AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航	询价
深圳市明嘉莱科技有限公司	IRF640	IR	24+	TO 220	160871	明嘉莱只做原装正品现货	询价
柒号芯城电子商务(深圳)有限公司	IRF640	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市讯顺达科技有限公司	IRF640	Slkor/萨科微	24+	TO-220	50000	Slkor/萨科微一级代理,价格优势	询价
深圳瞄钧科技有限公司	IRF640	AMD	24+	TO-220	48650	原装正品特价现货(香港新加坡日本)	询价

更多IRF640供应商更新时间2025-12-17 9:52:00

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