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IRF640NSPBF中文资料IRF数据手册PDF规格书
IRF640NSPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号：
IRF640NSPBF
- 功能描述：
MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
22+ |
5000 |
询价 | |||||
IR |
2021+ |
TO-263 |
3500 |
十年专营原装现货,假一赔十 |
询价 | ||
VISHAY/威世 |
20+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
24+ |
NA/ |
3287 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | |||
INFINEON |
24+ |
TO-263 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
询价 | ||
IR |
24+ |
TO-263 |
500 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
24+ |
TO-263 |
5000 |
全新原装正品,现货销售 |
询价 | ||
IR |
TO-263 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Infineon(英飞凌) |
24+ |
D2PAK |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 |
