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IRF640NSPBF中文资料KERSEMI数据手册PDF规格书
IRF640NSPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号：
IRF640NSPBF
- 功能描述：
MOSFET 30V 1 N-CH 150mOhm HEXFET 200V VDSS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
15/14+PBF |
TO-263 |
100 |
优势 |
询价 | ||
IR |
21+ |
TO-263 |
20000 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-263 |
65400 |
询价 | |||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
1923+ |
TO-263 |
7823 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
2022 |
D2PAK |
12000 |
全新原装现货热卖 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
22+ |
5000 |
询价 | |||||
IR |
24+ |
TO-263 |
3697 |
只做原装，欢迎询价，量大价优 |
询价 |
