N-channel power MOSFET for fast switching applications, 200V, 18A

Description\nFifth Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known f

Infineon

英飞凌

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nFast switching;

Vishay

威世

200V N-Channel Power MOSFET

MINOS

迈诺斯

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 A (Max.) @ VDS= 200V ■ Lower RDS(ON) : 0.144 Ω(Typ.)

文件：260.95 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.144Ω(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件：68.86 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：916.61 Kbytes 页数：10 Pages

Fairchild

仙童半导体

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：1.68999 Mbytes 页数：9 Pages

KERSEMI

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 0.180Ω(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件：65.77 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.150 Ω ■ EXTREMELY HIGH dV/dt CAPABILITY ■ VERY LOW

文件：107.08 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

IRF640FP 18A 200V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ♦ Silicon Gate for Fast Switching Speeds ♦ Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperat

文件：231.21 Kbytes 页数：5 Pages

FCI

富加宜