IRF640中文资料N-channel power MOSFET for fast switching applications, 200V, 18A数据手册Infineon规格书
IRF640规格书详情
描述 Description
Fifth Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
技术参数
- 型号：
IRF640
- 功能描述：
MOSFET N-Chan 200V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
询价 | ||
Slkor/萨科微 |
24+ |
TO-220 |
50000 |
Slkor/萨科微一级代理,价格优势 |
询价 | ||
CJ/长电 |
22+ |
TO-220-3L |
15240 |
原装正品 |
询价 | ||
IR(国际整流器) |
24+ |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | |||
ST/意法 |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
ST/意法 |
22+ |
TO220-3 |
8000 |
原装正品支持实单 |
询价 | ||
原装IR |
TO220 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IOR |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
FAIRCHILD/仙童 |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 |
