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IRF830APBF

HEXFETPowerMOSFET

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSu

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF830APBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable  

VishayVishay Siliconix

威世科技威世科技半导体

IRF830APBF

LowGateChargeQgResultsinSimpleDriveRequirement

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830AS

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半导体

IRF830AS

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830AS

PowerMOSFET(Vdss=500V,Rds(on)max=1.40ohm,Id=5.0A)

SMPSMOSFET Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSup

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF830ASPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASPBF

HEXFET짰PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF830ASPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRLPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半导体

IRF830ASTRLPBF

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF830ASTRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830B

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF830B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830B

Reducedcapacitiveswitchinglosses

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半导体

IRF830BPBF

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830F

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

详细参数

  • 型号:

    IRC830

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

供应商型号品牌批号封装库存备注价格
IR
08+(pbfree)
TO-2205-Pin(HEXSen
8866
询价
IR
23+
TO-2205-Pin(
8600
全新原装现货
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
IR
23+
TO-22O-5L
65480
询价
IR
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
IR
TO-220-5
265209
假一罚十原包原标签常备现货!
询价
I
23+
TO-220
10000
公司只做原装正品
询价
IR
23+
TO-220-5
50000
全新原装正品现货,支持订货
询价
更多IRC830供应商 更新时间2024-6-19 16:30:00