零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRC840 | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw | IRF International Rectifier | IRF | |
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw | IRF International Rectifier | IRF | ||
N-CHANNEL500V-0.75ohm-8A-TO-220PowerMESH]MOSFET
| STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
PowerMOStransistorAvalancheenergyrated DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR
| MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N-CHANNELPOWERMOSFETS FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFETs,8A,450V/500V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
8A,500V,0.850Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin | Intersil Intersil Corporation | Intersil | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) 500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight | IRF International Rectifier | IRF |
详细参数
- 型号:
IRC840
- 制造商:
IRF
- 制造商全称:
International Rectifier
- 功能描述:
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
24+ |
TO-2205-Pin(HEXSen |
8866 |
询价 | |||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
2016+ |
TO-220-5 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
23+ |
TO-2205-Pin( |
8600 |
全新原装现货 |
询价 | ||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
2020+ |
TO-220 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
23+ |
NA |
1155 |
专做原装正品,假一罚百! |
询价 | ||
IR |
23+ |
TO-220-5 |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
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