Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

文件：220.27 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Infineon

英飞凌

HEXFET Power MOSFET

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

文件：1.25191 Mbytes 页数：9 Pages

IRF

MOSFET N-CH 500V 8A TO-220-5

Vishay

威世