HEXFET Power MOSFET

Description Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional tw

文件：1.25191 Mbytes 页数：9 Pages

IRF

MOSFET N-CH 500V 8A TO-220-5

Vishay

威世

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

文件：146.97 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

PowerMOS transistor Avalanche energy rated

DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF840 is supplied in

文件：60.22 Kbytes 页数：7 Pages

PHI

PHI

N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET

文件：93.43 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体