Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads

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IRF

Simple Drive Requirements

文件：138.42 Kbytes 页数：6 Pages

IRF

HEXFET® Power MOSFET

Description\nThird Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.\nThe HEXSense device provides an accurate fraction of the drain current through the additional two leads t

Infineon

英飞凌

MOSFET N-CH 60V 50A TO-220-5

Vishay

威世