DIODE GEN PURP 100V 30A DO203AB

Vishay

威世

Package：DO-203AB，DO-5，接线柱；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 30A DO203AB

Vishay General Semiconductor - Diodes Division

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.73884 Mbytes 页数：10 Pages

KERSEMI

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤115mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.48 Kbytes 页数：2 Pages

ISC

无锡固电