Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain current through the additional two leads

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IRF

HEXFET Power MOSFET

文件：606.3 Kbytes 页数：9 Pages

IRF

HEXFET® Power MOSFET

Description\nThird Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.\nThe HEXSence device provides an accurate fraction of the drain current through the additional two leads t

Infineon

英飞凌

MOSFET N-CH 60V 30A TO-220-5

Vishay

威世