Dynamic dv/df Rating

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IRF

MOSFET N-CH 500V 4.5A TO-220-5

Vishay

威世

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. FEATURES • Repe

文件：58.83 Kbytes 页数：7 Pages

PHI

PHI

N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on)= 1.35Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 1

文件：92.72 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE

Power Field Effect Transistor N−Channel Enhancement Mode • Silicon Gate for Fast Switching Speeds • Low RDS(on) to Minimize On−Losses, Specified at Elevated Temperature • Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use with Inductive Loads

文件：282.47 Kbytes 页数：3 Pages

TRSYS

Transys Electronics