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3082

1/2RectangularTrimpot짰TrimmingPotentiometer

BournsBourns Inc.

伯恩斯(邦士)

ADM3082

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADM3082AN

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADM3082AR

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADM3082JN

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADM3082JR

High-Speed(10Mbps),Fail-Safe,RS-485/RS-422TransceiverswithSlew-Rate-Limitingand5kVESDProtection

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

ADNB-3082

High-performanceOpticalMouseSensor

Description TheADNS-3080isahighperformanceadditiontoAgilent’spopularADNSfamilyofopticalmousesensors. TheADNS-3080isbasedonanew,fasterarchitecturewithimprovednavigation.Thesensoriscapableofsensinghighspeedmousemotion-upto40inchespersecondandacceleratio

HPAgilent(Hewlett-Packard)

安捷伦科技安捷伦科技有限公司

AZRS3082

Fail-Safe,Slew-Rate-LimitedRS-485Transceiverwith짹30kVESDTransientVoltageSuppressor

Features MeettheRequirementsoftheEIA/TIA-485 Standardswith5VPowerSupply IntegratedTransientVoltageSuppressor(TVS) TVSProtectionforBusTerminals: ±30kV,IEC61000-4-2,Contact/AirDischarge ±88A,IEC61000-4-4,EFT(5/50ns) ±30A,IEC61000-4-5,Surge(8/20μs) HBM±1

AMAZINGAmazing Tech Co., Ltd

美新科技美新科技(香港)有限公司

AZRS3082.RDG

Fail-Safe,Slew-Rate-LimitedRS-485Transceiverwith짹30kVESDTransientVoltageSuppressor

Features MeettheRequirementsoftheEIA/TIA-485 Standardswith5VPowerSupply IntegratedTransientVoltageSuppressor(TVS) TVSProtectionforBusTerminals: ±30kV,IEC61000-4-2,Contact/AirDischarge ±88A,IEC61000-4-4,EFT(5/50ns) ±30A,IEC61000-4-5,Surge(8/20μs) HBM±1

AMAZINGAmazing Tech Co., Ltd

美新科技美新科技(香港)有限公司

BX3082

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

CA3082

GeneralPurposeHighCurrentNPNTransistorArrays

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3082

GeneralPurposeHighCurrentNPNTransistorArrays

CA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommonemitterconfigurationandtheCA3082isconnectedinacommoncollectorconfiguration. Features •CA3081-CommonEmitterArray •CA3082-Com

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3082

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

ROCHESTER

Rochester Electronics

CA3082F

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

ROCHESTER

Rochester Electronics

CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

CA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommonemitterconfigurationandtheCA3082isconnectedinacommoncollectorconfiguration. Features •CA3081-CommonEmitterArray •CA3082-Com

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3082M

GeneralPurposeHighCurrentNPNTransistorArrays

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3082M

HIGHCURRENTNPNTRANSISTORforgeneralpurposeapplicationsBJTArray

HIGHCURRENTNPNTRANSISTOR forgeneralpurposeapplications TheCA3081andCA3082consistofsevenhighcurrent(to100mA)siliconNPNtransistorsonacommonmonolithicsubstrate.TheCA3081isconnectedinacommoncollectorconfguration.TheCA3081andCA3082arecapableofdirectlydriving

ROCHESTER

Rochester Electronics

CDT3082

12餘듣Þ若싧츣?귛솳?㎩댍IC

BOWIN

BOWIN ELECTRONIC CO.

CEM3082

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,12A,RDS(ON)=10.5mΩ@VGS=10V. RDS(ON)=15.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CHM3082JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

供应商型号品牌批号封装库存备注价格
IR
22+
20-MLPQ
6000
终端可免费供样,支持BOM配单
询价
IR
23+
20-MLPQ
8000
只做原装现货
询价
IR
23+
20-MLPQ
7750
全新原装优势
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
21+
65230
询价
IR
21+ROHS
QFN
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IOR
23+
QFN-28
3
现货库存
询价
IR
23+
7300
专注配单,只做原装进口现货
询价
Infineon现货
2022+
QFN-20
350000
专注工业、军工级别芯片,十五年优质供应商
询价
Infineon/英飞凌
19+
68000
原装正品价格优势
询价
更多IR3082AMTRPBFCT供应商 更新时间2024-5-28 14:00:00