Ultra Low On-Resistance

Description These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：139.79 Kbytes 页数：9 Pages

IRF

N-Channel Enhancement Mode Power MOSFET

Features • VDS= 20V, ID= 12 A RDS(ON)

文件：1.28434 Mbytes 页数：5 Pages

BYCHIP

百域芯

TAPE CARRIER LOW NOISE GaAs FET???

DESCRIPTION The MGF1902B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURE

文件：210.25 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

1:9 Signal Distribution?

Description The SK1900 is an extremely fast, stable, and accurate low skew 1:9 clock / signal distributor featuring a synchronous enable, which allows the outputs to be turned off and on without the risk of an unpredictable output pulse. The D - flip-flop is triggered on the falling edge of the c

文件：929.54 Kbytes 页数：30 Pages

SEMTECH

先之科

Load Share Controller

文件：147.17 Kbytes 页数：6 Pages

TI

德州仪器