首页 >INA214BIRSWR-S>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors 1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: – | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors 1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: – | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors 1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: – | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A) VDSS=250V RDS(on)=2.0Ω ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca | IRF International Rectifier | IRF | ||
PowerMOSFET VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.79A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolder | IRF International Rectifier | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
21+ |
UQFN-10 |
13880 |
公司只售原装,支持实单 |
询价 | ||
TI/德州仪器 |
22+ |
UQFN-10 |
8880 |
原装认准芯泽盛世！ |
询价 | ||
TI/德州仪器 |
23+ |
UQFN-10 |
3000 |
原装正品，支持实单 |
询价 | ||
TI/德州仪器 |
23+ |
UQFN-10 |
9990 |
正规渠道,只有原装! |
询价 | ||
TI/德州仪器 |
21+ |
UQFN-10 |
9990 |
只有原装 |
询价 | ||
TI/德州仪器 |
23+ |
UQFN-10 |
5000 |
只有原装,欢迎来电咨询! |
询价 | ||
TI/德州仪器 |
21+ |
UQFN-10 |
9990 |
只有原装 |
询价 | ||
TI/德州仪器 |
23+ |
UQFN-10 |
9990 |
只有原装 |
询价 | ||
TI |
20+ |
原装 |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Texas Instruments |
21+ |
10-UQFN(1.8x1.4) |
53200 |
一级代理/放心采购 |
询价 |
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