IRFD214中文资料威世科技数据手册PDF规格书
IRFD214规格书详情
VDS (V) 250
RDS(on) (Ω) VGS = 10 V 2.0
Qg (Max.) (nC) 8.2
Qgs (nC) 1.8
Qgd (nC) 4.5
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
产品属性
- 型号：
IRFD214
- 功能描述：
MOSFET N-Chan 250V 0.45 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4475 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
24+ |
DIP-4 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
2016+ |
DIP-4 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
23+ |
DIP-4 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
25+23+ |
DIP-4 |
16406 |
绝对原装正品全新进口深圳现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
DIP-4 |
89630 |
当天发货全新原装现货 |
询价 | ||
IR |
22+ |
DIP-4 |
8000 |
原装正品支持实单 |
询价 | ||
IOR |
24+ |
DIP-4P |
68 |
询价 |
