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IRFD210PBF中文资料威世数据手册PDF规格书
IRFD210PBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
产品属性
- 型号：
IRFD210PBF
- 功能描述：
MOSFET N-Chan 200V 0.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
询价 | ||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
VISHAY(威世) |
24+ |
HVMDIP-4 |
7863 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
25+ |
DIP4 |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
22+ |
DIP-4 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
21+ |
DIP |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay(威世) |
23+ |
N/A |
11800 |
询价 | |||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
