IRFD210中文资料IRF数据手册PDF规格书
IRFD210规格书详情
DESCRIPTION
Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
产品属性
- 型号：
IRFD210
- 功能描述：
MOSFET N-Chan 200V 0.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
577 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VISHAY(威世) |
24+ |
HVMDIP4 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
MOT |
2016+ |
DIP4 |
1023 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
IR |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
0507+ |
DIP-4 |
3800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
24+/25+ |
1208 |
原装正品现货库存价优 |
询价 | |||
IR |
2016+ |
DIP4 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
a |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
IR欢迎订购 |
22+ |
DIP-4 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 |
