IRFD210中文资料威世数据手册PDF规格书
IRFD210规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
产品属性
- 型号：
IRFD210
- 功能描述：
MOSFET N-Chan 200V 0.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
05+ |
DIP-4 |
6000 |
自己公司全新库存绝对有货 |
询价 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
24+ |
DIP-4 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
a |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
询价 | ||
IR |
11+ |
DIP |
62000 |
原装正品现货优势18 |
询价 | ||
IR |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IR |
22+ |
HD-1 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
21+ |
DIP-4 |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
HAR |
24+ |
SOT-3770&NBS |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 |
