INA214CIDCKT

Marking：16G；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: –

INA214CIDCKT

Voltage Output, Low- or High-Side Measurement, Bidirectional

INA214CIDCKT

Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

INA214CIRSWR

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

INA214CIRSWR

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

INA214CIRSWR

INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: –

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

IRFD214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A)

VDSS=250V RDS(on)=2.0Ω ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRFD214

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes