丝印：GT045N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：701.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：947.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used a wide variety of applications. Application l Power switch l DC/DC converters

文件：976.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01255 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：943.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：959.19 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：701.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：947.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used a wide variety of applications. Application l Power switch l DC/DC converters

文件：976.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT045N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01255 Mbytes 页数：6 Pages

GOFORD

谷峰半导体