丝印：GT045N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：959.19 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode MOSFET

文件：1.57985 Mbytes 页数：10 Pages

HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

文件：1.86073 Mbytes 页数：9 Pages

HUAYI

华羿微电

N-Channel Enhancement Mode MOSFET

文件：1.57985 Mbytes 页数：10 Pages

HUAYI

华羿微电