丝印：GT045N10；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：947.17 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：701.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

IGBT模块

SILVERMICRO/银茂微

上传：深圳市芯纬度科技有限公司

IGBT模块

SILVERMICRO/银茂微

上传：深圳市芯纬度科技有限公司

电源滤波器

TOKIN

上传：揭阳普宁铝壳电阻