丝印：GT007N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT007N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：997.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT007N04；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT007N04；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT007N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：997.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT007N04；Package：TOLL-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.57 Kbytes 页数：6 Pages

GOFORD

谷峰半导体