G5616B规格书批发采购德州仪器TI-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
5616	文件：87.16 Kbytes Page：6 Pages	2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation	Allegro Allegro MicroSystems	Allegro
5616-RC	文件：428.21 Kbytes Page：1 Pages	HighCurrentChokes	BournsBourns Inc. 伯恩斯（邦士）	Bourns
ALC5616	文件：1.55994 Mbytes Page：104 Pages	Ultra-LowPowerAudioCODECforMobileDevices	REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司	REALTEK
ALC5616-CG	文件：1.55994 Mbytes Page：104 Pages	Ultra-LowPowerAudioCODECforMobileDevices	REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司	REALTEK
ALC5616-CGT	文件：1.55994 Mbytes Page：104 Pages	Ultra-LowPowerAudioCODECforMobileDevices	REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司	REALTEK
AOZ5616QI	文件：2.28076 Mbytes Page：17 Pages	High-Current,High-PerformanceDrMOSPowerModule GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
BCP5616	文件：150.69 Kbytes Page：9 Pages	LowpowerNPNTransistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
BCP5616Q	文件：395.23 Kbytes Page：8 Pages	NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616Q	文件：380.76 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTA	文件：380.76 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTA	文件：395.23 Kbytes Page：8 Pages	NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTC	文件：395.23 Kbytes Page：8 Pages	NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616QTC	文件：380.76 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616T	文件：557.35 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TA	文件：131.1 Kbytes Page：7 Pages	NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TC	文件：131.1 Kbytes Page：7 Pages	NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TQ	文件：556.97 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TQTA	文件：556.97 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCP5616TQTC	文件：556.97 Kbytes Page：7 Pages	80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)	DIODESDiodes Incorporated 达尔科技	DIODES
BCX5616	文件：591.06 Kbytes Page：2 Pages	NPNmediumpowertransistor	SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司	SKTECHNOLGY

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	G5616BRZ1U	GMT	23+	QFN	3000	原装现货假一赔十	询价
深圳市科恒伟业电子有限公司	G5616BRZ1U	GMT	1822+	QFN	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市百视威讯电子科技有限公司	G5616BRZ1U		23+	N/A	35900	正品授权货源可靠	询价
深圳市盈宏半导体科技有限公司	G5616BRZ1U	GMT	17+	QFN	3000	刚到现货加微13425146986	询价
深圳市艾宇特电子科技有限公司	G5616BRZ1U	GMT/致新	2048+	QFN	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市赛恒电子科技有限公司	G5616BRZ1U	GMT/致新	21+	QFN	6688	十年老店,原装正品	询价
深圳市汇莱威科技有限公司	G5616BRZ1U	GMT/致新		QFN	265209	假一罚十原包原标签常备现货!	询价
深圳市正纳电子有限公司	G5616BRZ1U其他被动元件	GMT/致新	ROHS/new original	QFN	10500	原装元器件供应现货支持。咨询更多现货库存,支持样	询价
深圳市明盛嘉电子科技有限公司	G5616BRZ1U其他被动元件	GMT/致新	21+	QFN	5000	原装现货/假一赔十/支持第三方检验	询价
深圳市正迈科技有限公司	G5616BRZ1U其他被动元件	GMT/致新	23+	QFN	10500	原装元器件供应现货支持。咨询更多现货库存,支持样	询价

更多G5616B供应商更新时间2024-5-4 13:00:00

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