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BCP5616TA

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TA

包装:卷带(TR) 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 1A SOT223-3

PAMDiodes Incorporated

龙鼎威

5616

2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE

FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation

Allegro

Allegro MicroSystems

5616-RC

HighCurrentChokes

BournsBourns Inc.

伯恩斯(邦士)

ALC5616

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CG

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

ALC5616-CGT

Ultra-LowPowerAudioCODECforMobileDevices

REALTEKRealtek Semiconductor Corp

瑞昱瑞昱半导体公司

AOZ5616QI

High-Current,High-PerformanceDrMOSPowerModule

GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

BCP5616

LowpowerNPNTransistor

SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BCP5616Q

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616Q

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616QTA

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

NPNMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616QTC

80VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616T

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TC

NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP5616TQ

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTA

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

BCP5616TQTC

80VNPNMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT)

DIODESDiodes Incorporated

达尔科技

产品属性

  • 产品编号:

    BCP5616TA

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 150mA,2V

  • 频率 - 跃迁:

    150MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-261-4,TO-261AA

  • 供应商器件封装:

    SOT-223-3

  • 描述:

    TRANS NPN 80V 1A SOT223-3

供应商型号品牌批号封装库存备注价格
Diodes Incorporated
23+
TO-261-4,TO-261AA
30000
晶体管-分立半导体产品-原装正品
询价
DIODES(美台)
22+
SOT-223
657
QQ询价 绝对原装正品
询价
ZETEX
22+
SOT223
15800
绝对原装现货,价格低,欢迎询购!
询价
DIODES/美台
20+
SOT-223
120000
原装正品 可含税交易
询价
DIODES/美台
SOT223
7906200
询价
DIODES(美台)
23+
SOT-223-4
8498
支持大陆交货,美金交易。原装现货库存。
询价
DIODESINCORPORATED
24+
160807
明嘉莱只做原装正品现货
询价
ZETEX
00+
SOT223
75975
询价
ZETEX
2000
原装正品现货供应
询价
ZETEX
2016+
SOT223
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多BCP5616TA供应商 更新时间2024-4-29 14:14:00