80V NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：380.76 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5616；Package：SOT223；NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：395.23 Kbytes 页数：8 Pages

DIODES

美台半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PWR MID PERF TRANSISTOR SOT223 T

DIODES

美台半导体

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

文件：557.35 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：131.1 Kbytes 页数：7 Pages

DIODES

美台半导体