丝印：BCP5616；Package：SOT223；NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：395.23 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：BCP5616；Package：SOT223；NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：395.23 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：BCP5616T；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：556.97 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5616T；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：556.97 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5616；Package：SOT223；NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：395.23 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：BCP5616；Package：SOT223；NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：395.23 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：BCP5616T；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：556.97 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BCP5616T；Package：SOT223；80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：556.97 Kbytes 页数：7 Pages

DIODES

美台半导体

Low power NPN Transistor

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPES ARE BCP52-16 AND BCP53-16 RESPECTIVELY APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■

文件：150.69 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

80V NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：380.76 Kbytes 页数：7 Pages

DIODES

美台半导体