丝印：BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS

BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Open-Collector Outputs Drive Bus Lines or Buffer Memory Address Registers Package Options Include Plastic description This octal bu

文件：557.43 Kbytes 页数：11 Pages

TI

德州仪器

丝印：BCT757；Package：SOIC；OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS

BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Open-Collector Outputs Drive Bus Lines or Buffer Memory Address Registers Package Options Include Plastic description This octal bu

文件：557.43 Kbytes 页数：11 Pages

TI

德州仪器