丝印：BCT；Package：QFN-16；26V,10A, High Efficiency, Fast Transient, Synchronous, Buck Converter with adjustable CLM

文件：685.98 Kbytes 页数：23 Pages

MPS

美国芯源

丝印：BCTA；Package：3LdSOT-23；300nA NanoPower Voltage References

300nA NanoPower Voltage References The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typical, 1.5µA maximum operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2 and 50ppm/°C temperature coefficient.

文件：1.22435 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：BCT2245；Package：SOIC；OCTAL TRANSCEIVER AND LINE/MOS DRIVER WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V State-of-the-Art BiCMOS Design Significantly Reduces ICCZ B Port Has Equivalent 33-Ω Series Resistors, So No External Resistors Are Required ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) − 1000-V

文件：601.85 Kbytes 页数：14 Pages

TI2

德州仪器

丝印：BCT2245；Package：SOIC；OCTAL TRANSCEIVER AND LINE/MOS DRIVER WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V State-of-the-Art BiCMOS Design Significantly Reduces ICCZ B Port Has Equivalent 33-Ω Series Resistors, So No External Resistors Are Required ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) − 1000-V

文件：601.85 Kbytes 页数：14 Pages

TI2

德州仪器

丝印：BCT2245；Package：SOP；OCTAL TRANSCEIVER AND LINE/MOS DRIVER WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V State-of-the-Art BiCMOS Design Significantly Reduces ICCZ B Port Has Equivalent 33-Ω Series Resistors, So No External Resistors Are Required ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) − 1000-V

文件：601.85 Kbytes 页数：14 Pages

TI2

德州仪器

丝印：BCT2245；Package：SOP；OCTAL TRANSCEIVER AND LINE/MOS DRIVER WITH 3-STATE OUTPUTS

Operating Voltage Range of 4.5 V to 5.5 V State-of-the-Art BiCMOS Design Significantly Reduces ICCZ B Port Has Equivalent 33-Ω Series Resistors, So No External Resistors Are Required ESD Protection Exceeds JESD 22 − 2000-V Human-Body Model (A114-A) − 200-V Machine Model (A115-A) − 1000-V

文件：601.85 Kbytes 页数：14 Pages

TI2

德州仪器

丝印：BCT2414；Package：SOIC；MEMORY DECODER WITH ON-CHIP SUPPLY VOLTAGE MONITOR

BiCMOS Design Substantially Reduces Standby Current Two Independent 2-Line to 4-Line Decoders or One 3-Line to 8-Line Decoder Separate Enable Inputs for Easy Cascading Two Supply Voltage Terminals (VCC and Vbat ) Built-In Supply-Voltage Monitor for VCC Automatic Cut Off of Outputs During

文件：599.69 Kbytes 页数：14 Pages

TI2

德州仪器

丝印：BCT2414；Package：SOIC；MEMORY DECODER WITH ON-CHIP SUPPLY VOLTAGE MONITOR

BiCMOS Design Substantially Reduces Standby Current Two Independent 2-Line to 4-Line Decoders or One 3-Line to 8-Line Decoder Separate Enable Inputs for Easy Cascading Two Supply Voltage Terminals (VCC and Vbat ) Built-In Supply-Voltage Monitor for VCC Automatic Cut Off of Outputs During

文件：599.69 Kbytes 页数：14 Pages

TI2

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI2

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI2

德州仪器