MP8720GQ

Marking：BCT；Package：QFN-16；26V,10A, High Efficiency, Fast Transient, Synchronous, Buck Converter with adjustable CLM

ISL21080CIH333Z-TK

Marking：BCTA；Package：3LdSOT-23；300nA NanoPower Voltage References

300nANanoPowerVoltageReferences TheISL21080analogvoltagereferencesfeaturelowsupplyvoltageoperationatultra-low310nAtypical,1.5µAmaximumoperatingcurrent.Additionally,theISL21080familyfeaturesguaranteedinitialaccuracyaslowas±0.2and50ppm/°Ctemperaturecoefficient.

SN74BCT25244DW

Marking：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

•State-of-the-ArtBiCMOSDesign SignificantlyReducesICCZ •ESDProtectionExceeds2000VPer MIL-STD-883C,Method3015;Exceeds 200VUsingMachineModel(C=200pF, R=0) •DesignedtoFacilitateIncident-Wave SwitchingforLineImpedancesof25W orGreater •DistributedVCCandGN

SN74BCT25244DWR

Marking：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

•State-of-the-ArtBiCMOSDesign SignificantlyReducesICCZ •ESDProtectionExceeds2000VPer MIL-STD-883C,Method3015;Exceeds 200VUsingMachineModel(C=200pF, R=0) •DesignedtoFacilitateIncident-Wave SwitchingforLineImpedancesof25W orGreater •DistributedVCCandGN

SN74BCT25244DWR.A

Marking：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

•State-of-the-ArtBiCMOSDesign SignificantlyReducesICCZ •ESDProtectionExceeds2000VPer MIL-STD-883C,Method3015;Exceeds 200VUsingMachineModel(C=200pF, R=0) •DesignedtoFacilitateIncident-Wave SwitchingforLineImpedancesof25W orGreater •DistributedVCCandGN

SN74BCT2827CDW

Marking：BCT2827C；Package：SOIC；10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

BiCMOSDesignSubstantiallyReducesICCZ OutputPortsHaveEquivalent25-Ω Resistors;NoExternalResistorsAre Required SpecificallyDesignedtoDriveMOSDRAMs 3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters Flow-ThroughArchitectureOptimizes PCBLayout Power-UpHigh

SN74BCT2827CDW.A

Marking：BCT2827C；Package：SOIC；10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

BiCMOSDesignSubstantiallyReducesICCZ OutputPortsHaveEquivalent25-Ω Resistors;NoExternalResistorsAre Required SpecificallyDesignedtoDriveMOSDRAMs 3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters Flow-ThroughArchitectureOptimizes PCBLayout Power-UpHigh

SN74BCT29827BDW

Marking：BCT29827B；Package：SOIC；10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

•State-of-the-ArtBiCMOSDesign SignificantlyReducesICCZ •ESDProtectionExceeds2000VPer MIL-STD-883C,Method3015;Exceeds 200VUsingMachineModel(C=200pF, R=0) •3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters •P-N-PInputsReduceDCLoading •Flow-Thr

SN74BCT29827BDW.A

Marking：BCT29827B；Package：SOIC；10-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

•State-of-the-ArtBiCMOSDesign SignificantlyReducesICCZ •ESDProtectionExceeds2000VPer MIL-STD-883C,Method3015;Exceeds 200VUsingMachineModel(C=200pF, R=0) •3-StateOutputsDriveBusLinesorBuffer MemoryAddressRegisters •P-N-PInputsReduceDCLoading •Flow-Thr

SN74BCT29854DW

Marking：BCT29854；Package：SOIC；8-BIT TO 9-BIT PARITY BUS TRANSCEIVER

•BiCMOSProcessWithTTLInputsand Outputs •State-of-the-ArtBiCMOSDesign SignificantlyReducesStandbyCurrent •Flow-ThroughPinout(AllInputson OppositeSideFromOutputs) •FunctionallyEquivalenttoAMDAm29854 •High-SpeedBusTransceiverWithParity Generator/Checker •Parity