丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI2

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI2

德州仪器

丝印：BCT25244；Package：SOIC；25-W OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS

• State-of-the-Art BiCMOS Design Significantly Reduces ICCZ • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 W or Greater • Distributed VCC and GN

文件：229.96 Kbytes 页数：9 Pages

TI2

德州仪器