丝印：BCT652；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data Power-Up High-Impedance Mo

文件：232.25 Kbytes 页数：10 Pages

TI2

德州仪器

丝印：BCT652；Package：SOIC；OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Independent Registers and Enables for A and B Buses Multiplexed Real-Time and Stored Data Power-Up High-Impedance Mo

文件：232.25 Kbytes 页数：10 Pages

TI2

德州仪器