DrMOS + Smart Power Stages (SPS)

AOZ5616QI is a 55A high power DrMOS module in QFN5x5 package for mobile computing application.It uses PWM and SMOB# inputs for accurate control of the power MOSFETs switching activities. It is compatible with 5V logic and supports Tri-State PWM. The Low-Side MOSFET can be driven into diode emulation

AOS

美国万代

丝印：BY00；Package：QFN5x5-31L；High-Current, High-Performance DrMOS Power Module

General Description The AOZ5616QI is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve

文件：2.28076 Mbytes 页数：17 Pages

AOSMD

万国半导体

Package：31-PowerVFQFN 模块；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 功率驱动器模块 描述：30V 55A QFN5X5 DRMOS POWER STAGE

Alpha \u0026 Omega Semiconductor Inc.

Low power NPN Transistor

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPES ARE BCP52-16 AND BCP53-16 RESPECTIVELY APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■

文件：150.69 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

80V NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

文件：380.76 Kbytes 页数：7 Pages

DIODES

美台半导体

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

文件：395.23 Kbytes 页数：8 Pages

DIODES

美台半导体