丝印：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：82.71 Kbytes 页数：7 Pages

Intersil

丝印：G20N60C3；Package：TO-220AB；45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

文件：81.67 Kbytes 页数：7 Pages

Intersil

丝印：G20H603；Package：PG-TO220-3；High speed switching series third generation

High speed IGBT in Trench and Fieldstop technology Features: TRENCHSTOPTM technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating,halogen-free mould compound,RoH

文件：2.11172 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：G20N60HS；Package：PG-TO-220-3-1；High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：G20N60HS；Package：PG-TO-247-3；High Speed IGBT in NPT-technology

High Speed IGBT in NPT-technology • 30 lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers:    - parallel switching capability    - moderate Eoff increase with temperature    -

文件：426.22 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：G20M65DF2；Package：TO-220FP；Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Desc

文件：531.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：G20M65DF2；Package：TO-220；Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

Features • High short-circuit withstand time • VCE(sat) = 1.55 V (typ.) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC • General-purpose inverters Des

文件：520.21 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：G20IH125DF；Package：TO-247；1250 V, 20 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.35779 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：G20HP65FB2；Package：TO-247；Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • Welding • Power fa

文件：373.93 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：G20IH125DF；Package：TO-3P；1250 V, 20 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.35779 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体