丝印：G20IH125DF；Package：TO-3P；1250 V, 20 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.35779 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：G2053；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES • HIGH ISOLATION : ISL = 38 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • CONTROL VOLTAGE : VCONT (H) = +4.5 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • LOW INSERTION LOSS : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-PIN

文件：256.899 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：G2054；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES • High isolation : ISL = 40 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • Control voltage : VCONT (H) = +3.0 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • Low insertion loss : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-pin

文件：298.33 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：G2054；Package：QFN；GaAs INTEGRATED CIRCUIT

FEATURES • High isolation : ISL = 40 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • Control voltage : VCONT (H) = +3.0 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.) • Low insertion loss : LINS = 6.0 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V, ZO = 50 Ω • 20-pin

文件：298.33 Kbytes 页数：16 Pages

RENESAS

瑞萨

丝印：G200；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G20ES5；Package：PG-TO263-3；High speed switching series fifth generation

文件：1.36373 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：G200；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：G200；Package：Micro8；Current-Shunt Monitors, 40 V Common Mode, Unidirectional, Single, Dual, Quad

文件：873.15 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：G20N60；Package：PG-TO-220-3-1；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：364.5 Kbytes 页数：12 Pages

INFINEON

英飞凌

丝印：G20N60；Package：PG-TO-247-3；Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：364.5 Kbytes 页数：12 Pages

INFINEON

英飞凌