丝印：G20IH125DF；Package：TO-3P；1250 V, 20 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.35779 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

1250 V、20 A IH系列沟槽栅场截止IGBT

These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for • Designed for soft commutation only \n• Maximum junction temperature: TJ= 175 °C \n• Minimized tail current \n• VCE(sat)= 2.0 V (typ.) @ IC= 15 A \n• Tight parameters distribution \n• Safe paralleling \n• Very low VFsoft recovery co-packaged diode \n• Low thermal resistance \n• Lead free package;

ST

意法半导体

Package：TO-3P-3，SC-65-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1250V 40A 259W TO-3P

STMICROELECTRONICS

意法半导体

1250 V, 20 A IH series trench gate field-stop IGBT

Description These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to max

文件：1.35779 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体