STGWT20IH125DF中文资料1250 V、20 A IH系列沟槽栅场截止IGBT数据手册ST规格书

描述 Description

These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.

特性 Features

• Designed for soft commutation only
• Maximum junction temperature: TJ= 175 °C
• Minimized tail current
• VCE(sat)= 2.0 V (typ.) @ IC= 15 A
• Tight parameters distribution
• Safe paralleling
• Very low VFsoft recovery co-packaged diode
• Low thermal resistance
• Lead free package

简介

STGWT20IH125DF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGWT20IH125DF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。