首页>STGWA80H65DFBAG>规格书详情
STGWA80H65DFBAG数据手册ST中文资料规格书
STGWA80H65DFBAG规格书详情
描述 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
特性 Features
• AEC-Q101 qualified
• High-speed switching series
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A
• Minimized tail current
• Tight parameter distribution
• Positive temperature VCE(sat) coefficient
• Soft and very fast recovery antiparallel diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO247 |
12700 |
买原装认准中赛美 |
询价 | ||
ST |
14+ |
TO-247 |
5326 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
23+ |
TO-247 long leads |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
ST |
23+ |
TO247 |
25630 |
原装正品 |
询价 | ||
ST/意法 |
21+ |
TO-247 |
8000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST |
24+ |
TO247 |
12800 |
原装正品现货支持实单 |
询价 | ||
ST/意法 |
24+ |
TO247-3 |
584 |
只做原装，欢迎询价，量大价优 |
询价 |
