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STGWA40H65DHFB2数据手册ST中文资料规格书
STGWA40H65DHFB2规格书详情
描述 Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery half-rated diode is co-packaged in antiparallel with the IGBT.
The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
特性 Features
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
• Soft and very fast recovery half-rated co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
技术参数
- 制造商编号
：STGWA40H65DHFB2
- 生产厂家
：ST
- Package
：TO-247 long leads
- Grade
：Industrial
- VCES_max(V)
：650
- PTOT_max(W)
：227
- Freewheeling diode
：true
- IC_max(@ Tc=100°C)(A)
：40
- IC_max(@ Tc=25°C)(A)
：75
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法半导体 |
23+ |
TO-247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法 |
25+ |
原厂原封可拆样 |
64687 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
23+ |
TO-247 long leads |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST |
23+ |
NA |
19587 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
21+ |
TO247 |
5000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
