STGWA20H65DFB2数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

特性 Features

• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient

简介

STGWA20H65DFB2属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGWA20H65DFB2晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。