STGWA20H65DFB数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
Maximum junction temperature: TJ = 175 °CHigh speed switching seriesMinimized tail currentLow saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 20 ATight parameter distributionPositive VCE(sat) temperature coefficientLow thermal resistanceVery fast soft recovery antiparallel diode

特性 Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 20 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Very fast soft recovery antiparallel diode

简介

STGWA20H65DFB属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGWA20H65DFB晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。