STGW8M120DF3中文资料1200 V、8 A沟槽栅场截止低损耗M系列IGBT数据手册ST规格书

描述 Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

特性 Features

• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 8 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode

简介

STGW8M120DF3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGW8M120DF3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。