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STGWA50H65DFB2数据手册ST中文资料规格书
STGWA50H65DFB2规格书详情
描述 Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
特性 Features
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
• Very fast and soft recovery co-packaged diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
技术参数
- 制造商编号
：STGWA50H65DFB2
- 生产厂家
：ST
- Package
：TO-247 long leads
- Grade
：Industrial
- VCES_max(V)
：650
- PTOT_max(W)
：272
- Freewheeling diode
：true
- IC_max(@ Tc=25°C)(A)
：86
- IC_max(@ Tc=100°C)(A)
：53
- IF_max(@ Tc=25°C)(A)
：60
- IF_max(@ Tc=100°C)(A)
：38
- VCE(sat)_typ(V)
：1.55
- VF_typ(V)
：1.85
- Qg_typ(nC)
：151
- Eon_typ(mJ)
：0.91
- Eoff_typ(mJ)
：0.58
- Err_typ(µJ)
：138
- Qrr_typ(nC)
：673
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST |
23+ |
TO-247 long leads |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST |
22+ |
NA |
5000 |
原装正品支持实单 |
询价 | ||
STMicroelectronics |
25+ |
TO-247-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
ST/意法 |
22+ |
TO-247 |
9000 |
原装正品,支持实单! |
询价 | ||
ST |
24+ |
TO-247 |
16500 |
只做原装正品现货 假一赔十 |
询价 | ||
ST |
24+ |
TO-247 |
8000 |
原装，正品 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 |
