STGWA40M120DF3中文资料1200 V、40 A沟槽栅场截止低损耗M系列IGBT数据手册ST规格书

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

特性 Features

• 10 μs of short-circuit withstand time
• VCE(sat)= 1.85 V (typ.) @ IC= 40 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode

简介

STGWA40M120DF3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGWA40M120DF3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。