STGWA60V60DWFAG数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.

特性 Features

• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• VCE(sat) = 1.85 V (typ.) @ IC = 60 A
• Tail-less switching current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient
• Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration

简介

STGWA60V60DWFAG属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的STGWA60V60DWFAG晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。