丝印：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：123.08 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

丝印：G20N60C3D；Package：TO-247；45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderate

文件：82.71 Kbytes 页数：7 Pages

INTERSIL

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately • 45A, 600V, TC= 25°C\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . .  108ns at TJ= 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode;

Renesas

瑞萨

45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately • 45A, 600V, TC= 25°C\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . .  108ns at TJ= 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode;

ONSEMI

安森美半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 45A 164W TO247

ONSEMI

安森美半导体