首页>HGTG20N60C3D>规格书详情
HGTG20N60C3D数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

厂商型号 |
HGTG20N60C3D |
参数属性 | HGTG20N60C3D 封装/外壳为TO-247-3;包装为管件;类别为分立半导体产品的晶体管-UGBT、MOSFET-单;产品描述:IGBT 600V 45A 164W TO247 |
功能描述 | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
封装外壳 | TO-247-3 |
制造商 | Renesas Renesas Technology Corp |
中文名称 | 瑞萨 瑞萨科技有限公司 |
原厂标识 | |
数据手册 | |
更新时间 | 2025-8-4 17:21:00 |
人工找货 | HGTG20N60C3D价格和库存,欢迎联系客服免费人工找货 |
HGTG20N60C3D规格书详情
描述 Description
The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).
特性 Features
• 45A, 600V, TC= 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
技术参数
- 产品编号:
HGTG20N60C3D
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.8V @ 15V,20A
- 开关能量:
500µJ(开),500µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
28ns/151ns
- 测试条件:
480V,20A,10 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247-3
- 描述:
IGBT 600V 45A 164W TO247
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
询价 | ||
FAIRCHILD |
23+ |
TO-247 |
9526 |
询价 | |||
INTESIL |
23+ |
TO-3P |
2000 |
专做原装正品,假一罚百! |
询价 | ||
onsemi |
25+ |
TO-247-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
3395 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Intersil |
24+ |
TO-247 |
8866 |
询价 | |||
HARRIS |
17+ |
TO-3P |
6200 |
询价 | |||
仙童 |
06+ |
TO-247 |
6000 |
原装库存 |
询价 | ||
仙僮 |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
har |
24+ |
500000 |
行业低价,代理渠道 |
询价 |