HGTG20N60C3D数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).

特性 Features

• 45A, 600V, TC= 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . .  108ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

简介

HGTG20N60C3D属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的HGTG20N60C3D晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。